David C Paine
David C Paine
Professor Emeritus of Engineering, Director of Molecular and Nanoscale Innovation
Overview
David Paine performs research in the general areas of thin films, interfaces, and electronic materials in the School of Engineering at Brown University. His current focus is on oxide electronics, electron microscopy, and physical vapor deposition technology. He serves as Director of the Brown University Electron Microscope Facility.
Brown Affiliations
Research Areas
electron microscopy | ITO | IZO | oxide electronics | thin film transistors | transparent conducting oxides
Publications
| Xu, Rui, He, Jian, Li, Wei, Paine, David C. "Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing." Applied Surface Science, vol. 357, 2015, pp. 1915-1919. |
| Xu, Rui, He, Jian, Song, Yang, Li, Wei, Zaslavsky, A., Paine, D. C. "Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors." Appl. Phys. Lett., vol. 105, no. 9, 2014, pp. 093504. |
| Lee, Sunghwan, Paine, David C., Gleason, Karen K. "Heavily Doped poly(3,4-ethylenedioxythiophene) Thin Films with High Carrier Mobility Deposited Using Oxidative CVD: Conductivity Stability and Carrier Transport." Adv. Funct. Mater., 2014, pp. n/a-n/a. |
| Lee, Sunghwan, Paine, David C. "Metallization selection and the performance of amorphous In-Zn-O thin film transistors." Appl. Phys. Lett., vol. 104, no. 25, 2014, pp. 252103. |
| Song, Yang, Xu, Rui, He, Jian, Siontas, Stylianos, Zaslavsky, Alexander, Paine, David C. "Top-Gated Indium–Zinc–Oxide Thin-Film Transistors With In Situ Al2O3/HfO2 Gate Oxide." IEEE Electron Device Lett., vol. 35, no. 12, 2014, pp. 1251-1253. |
| Lee, Sunghwan, Paine, David C. "Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation." Appl. Phys. Lett., vol. 102, no. 5, 2013, pp. 052101. |
| Cosentino, S., Mirabella, S., Liu, Pei, Le, Son T., Miritello, M., Lee, S., Crupi, I., Nicotra, G., Spinella, C., Paine, D., Terrasi, A., Zaslavsky, A., Pacifici, D. "Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology." Thin Solid Films, vol. 548, 2013, pp. 551-555. |
| Lee, Jonghun, Lee, Sunghwan, Li, Guanglai, Petruska, Melissa A., Paine, David C., Sun, Shouheng. "A Facile Solution-Phase Approach to Transparent and Conducting ITO Nanocrystal Assemblies." J. Am. Chem. Soc., vol. 134, no. 32, 2012, pp. 13410-13414. |
| Lee, Sunghwan, Bierig, Brian, Paine, David C. "Amorphous structure and electrical performance of low-temperature annealed amorphous indium zinc oxide transparent thin film transistors." Thin Solid Films, vol. 520, no. 10, 2012, pp. 3764-3768. |
| Liu, P., Le, S. T., Lee, S., Paine, D., Zaslavsky, A., Pacifici, D., Cosentino, S., Mirabella, S., Miritello, M., Crupi, I., Terrasi, A. "Fast, high-efficiency Germanium quantum dot photodetectors." 2012 Lester Eastman Conference on High Performance Devices (LEC), 2012. |
| Lee, Sunghwan, Park, Keunhan, Paine, David C. "Metallization strategies for In2O3-based amorphous oxide semiconductor materials." Journal of Materials Research, vol. 27, no. 17, 2012, pp. 2299-2308. |
| Lee, Sunghwan, Kim, Seung-Hyun, Kim, Youngha, Kingon, Angus I., Paine, David C., No, Kwangsoo. "Structural and electrical properties of transparent conducting Al2O3-doped ZnO thin films using off-axis DC magnetron sputtering." Materials Letters, vol. 85, 2012, pp. 88-90. |
| Lee, Sunghwan, Park, Hongsik, Paine, David C. "The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors." Thin Solid Films, vol. 520, no. 10, 2012, pp. 3769-3773. |
| Lee, Sunghwan, Park, Hongsik, Paine, David C. "A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source–drain metallization." J. Appl. Phys., vol. 109, no. 6, 2011, pp. 063702. |
| Cosentino, S., Liu, Pei, Le, Son T., Lee, S., Paine, D., Zaslavsky, A., Pacifici, D., Mirabella, S., Miritello, M., Crupi, I., Terrasi, A. "High-efficiency silicon-compatible photodetectors based on Ge quantum dots." Appl. Phys. Lett., vol. 98, no. 22, 2011, pp. 221107. |
| Lee, Sunghwan, Paine, David C. "On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications." Appl. Phys. Lett., vol. 98, no. 26, 2011, pp. 262108. |
| Paine, David C., Yaglioglu, Burag, Beiley, Zach, Lee, Sunghwan. "Amorphous IZO-based transparent thin film transistors." Thin Solid Films, vol. 516, no. 17, 2008, pp. 5894-5898. |
| Ow-Yang, Cleva W., Yeom, Hyo-young, Paine, David C. "Fabrication of transparent conducting amorphous Zn–Sn–In–O thin films by direct current magnetron sputtering." Thin Solid Films, vol. 516, no. 10, 2008, pp. 3105-3111. |
| Fortunato, Elvira, Ginley, David, Hosono, Hideo, Paine, David C. "Transparent Conducting Oxides for Photovoltaics." MRS Bull., vol. 32, no. 03, 2007, pp. 242-247. |
| Yaglioglu, Burag, Huang, Yen-Jung, Yeom, Hyo-Young, Paine, David C. "A study of amorphous and crystalline phases in In2O3–10 wt.% ZnO thin films deposited by DC magnetron sputtering." Thin Solid Films, vol. 496, no. 1, 2006, pp. 89-94. |
| Yaglioglu, B., Yeom, H. Y., Beresford, R., Paine, D. C. "High-mobility amorphous In[sub 2]O[sub 3]–10 wt %ZnO thin film transistors." Appl. Phys. Lett., vol. 89, no. 6, 2006, pp. 062103. |
| Yaglioglu, Burag, Yeom, Hyo-Young, Paine, David C. "Crystallization of amorphous In[sub 2]O[sub 3]–10 wt % ZnO thin films annealed in air." Appl. Phys. Lett., vol. 86, no. 26, 2005, pp. 261908. |
Research
Research Overview
Professor Paine's research interests are in thin film characterization and processing with a focus on interfaces and interface stability in electronic thin film systems. The evolution of microstructure as a function of processing conditions is being studied in a wide range of materials synthesized by physical vapor deposition techniques. Key characterization techniques include x-ray diffraction, electron microscopy, semiconductor device measurements.
Research Statement
Amorphous metal oxides with the (n-1)d10ns0 (n≥4) electronic configuration are being used for the fabrication of thin film transistors (TFT's) with superior performance when compared to current amorphous Si-based devices. These new materials are optically transparent and have important application to organic light emitting-based displays which, as current-driven devices, require a higher on/off current ratio than field-driven LCD-based displays. Amorphous oxides such as ZnO-rich ZnO : In2O3 (a−ZIO, molar ratio of 2:1), ZnO : SnO2 (a-ZSO, molar ratios of 1:1 and 1:2) and In2O3 : Ga2O3 : ZnO ternary oxide (a-IGZO, In1.1:Ga1.1:Zn0.9) all have field effect mobilities of ~650 cm2 / V s which is very attractive relative to amorphous Si .
Amorphous In2O3-10wt%ZnO (a-IZO) is a particularly attractive candidate material due to its high electron mobility, room temperature processing, high surface planarity, and isotropic etch characteristics. We are investigating a-IZO channel / a-IZO metallization structured TFT's since, with IZO's carrier concentration tunable between ~ 1E15 / cm3 to ~ 5E20 / cm3, the same IZO target can be used to deposit both the semiconducting channel and source/drain metallization layers by simply adjusting the process oxygen during deposition. Also, compositionally homogeneous IZO/IZO channel metallization has favorable band alignment which may contribute to a low specific contact resistance. For TFT applications, amorphous IZO channel material must be deposited with low carrier density, high carrier mobility, and good ohmic source-drain channel contact must be achieved by finding source/drain metals with a minimum specific contact resistance to the IZO channel. One challenge that limits the implementation of a-IZO channel devices is the difficulty in achieving low enough carrier concentrations to limit enhancement mode TFT off-state current. One approach has been to utilize very thin channel layers, while another is to add Ga as a third cation species to IZO (IGZO) to suppress native defect-based carrier formation. The addition of cation species increases scattering and significantly decreases channel carrier mobility. On the other hand, the use of very thin (10 30 nm) IZO channel layers poses processing and device design challenges.
Amorphous In2O3-10wt%ZnO (a-IZO) is a particularly attractive candidate material due to its high electron mobility, room temperature processing, high surface planarity, and isotropic etch characteristics. We are investigating a-IZO channel / a-IZO metallization structured TFT's since, with IZO's carrier concentration tunable between ~ 1E15 / cm3 to ~ 5E20 / cm3, the same IZO target can be used to deposit both the semiconducting channel and source/drain metallization layers by simply adjusting the process oxygen during deposition. Also, compositionally homogeneous IZO/IZO channel metallization has favorable band alignment which may contribute to a low specific contact resistance. For TFT applications, amorphous IZO channel material must be deposited with low carrier density, high carrier mobility, and good ohmic source-drain channel contact must be achieved by finding source/drain metals with a minimum specific contact resistance to the IZO channel. One challenge that limits the implementation of a-IZO channel devices is the difficulty in achieving low enough carrier concentrations to limit enhancement mode TFT off-state current. One approach has been to utilize very thin channel layers, while another is to add Ga as a third cation species to IZO (IGZO) to suppress native defect-based carrier formation. The addition of cation species increases scattering and significantly decreases channel carrier mobility. On the other hand, the use of very thin (10 30 nm) IZO channel layers poses processing and device design challenges.
Scholarly Work
S. Lee, K. Park, and D. C. Paine, "Metallization Strategies for In2O3-based amorphous oxide semiconductor materials", J. Materials Research, in press (2012).
S. Lee, S. Park, and D.C. Paine, "A Study of the Specific Contact Resistance and Channel Resistivity of Amorphous IZO thin film transistors with IZO source-drain metallization", J. Appl. Phys. J. Appl. Phys. 109, 063702 (2011).
S. Lee and D. C. Paine, "On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications", Appl. Phys. Lett. 98(26), 262108 (2011).
D.C. Paine, B. Yaglioglu, Z. Beiley, and S. Lee, "Amorphous IZO-based transparent thin film transistors", Thin Solid Films, 516(17,) 5894-5898 (2008).
B. Yaglioglu, H. Y. Yeom, R. Beresford, and D. C. Paine, "High-mobility amorphous In2O3-10 wt %ZnO thin film transistors," Applied Physics Letters, 89, 062103(2006).
Background
Education and Training
| Year | Degree | Institution |
|---|---|---|
| 1988 | PhD | Stanford University |
| 1984 | MS | University of Toronto |
| 1982 | BS | University of Toronto |
Honors and Awards
N/A
Affiliations
Affiliations
Materials Research Society
Institute of Electrical and Electronics Engineers (IEEE)
The Minerals, Metals and Materials Society (TMS)
Institute of Electrical and Electronics Engineers (IEEE)
The Minerals, Metals and Materials Society (TMS)
Teaching
Teaching Overview
Prof Paine teaches courss in in the Division of Engineering in materials characterization (EN0240: Electron microscopy); in thermodynamics of phase equilibrium (EN0141 and EN0241); in electronic materials (EN0145); and occasionally teaches courses in crystallography, physical metallurgy, and introductory materials (EN0041).
Teaching
| ENGN 0260 - Mechanical Technology |
| ENGN 0410 - Materials Science |
| ENGN 1450 - Properties and Processing of Electronic Materials |
| ENGN 2400 - Electron Microscopy in Materials Science |
| ENGN 2410 - Thermodynamics of Materials |
| ENGN 2490A - Crystal Structures and Crystallography |