Rod Beresford earned degrees in electrical engineering from Yale University (B.S. 1979, M.S. 1981) and from Columbia University (Ph.D. 1990). He is currently Professor of Engineering at Brown University, where he has held several leadership positions, including Senior Associate Dean for Academic Programs and Associate Provost for Academic Space. In 2020/21, he served as an IEEE/AAAS Congressional Fellow, working on the Senate Energy and Natural Resources Committee. Prior positions held include editor-in-chief of VLSI Design, senior editor of Electronics, and engineer at the IBM T.J. Watson Research Center. He has published over 80 scientific and technical papers on semiconductor materials and devices. He has worked on molecular beam epitaxial growth of III-V semiconductors since 1987 and served on the Advisory Board of the North American MBE Conference.
| Cheng, Yana, Beresford, Roderic. "Epitaxial Silicon Dots Self-Assembled on Aluminum Nitride/Si (111)." Nano Letters, vol. 13, no. 2, 2013, pp. 614-617. |
| Triroj, Napat, Jaroenapibal, Papot, Beresford, Roderic. "Gas-assisted focused ion beam fabrication of gold nanoelectrode arrays in electron-beam evaporated alumina films for microfluidic electrochemical sensors." Sensors and Actuators B: Chemical, vol. 187, 2013, pp. 455-460. |
| Park, Hongsik, Beresford, Roderic, Ha, Ryong, Choi, Heon-Jin, Shin, Hyunjung, Xu, Jimmy. "Evaluation of metal–nanowire electrical contacts by measuring contact end resistance." Nanotechnology, vol. 23, no. 24, 2012, pp. 245201. |
| Cheng, Yana, Beresford, Roderic. "Growth of AlN/SiC/AlN quantum wells on Si(111) by molecular beam epitaxy." Appl. Phys. Lett., vol. 100, no. 23, 2012, pp. 232112. |
| Park, Hongsik, Kim, Jin Ho, Beresford, Roderic, Xu, Jimmy. "Effects of electrical contacts on the photoconductive gain of nanowire photodetectors." Appl. Phys. Lett., vol. 99, no. 14, 2011, pp. 143110. |
| Triroj, Napat, Jaroenapibal, Papot, Shi, Haibin, Yeh, Joanne I., Beresford, Roderic. "Microfluidic chip-based nanoelectrode array as miniaturized biochemical sensing platform for prostate-specific antigen detection." Biosensors and Bioelectronics, vol. 26, no. 6, 2011, pp. 2927-2933. |
| Park, Hongsik, Beresford, Roderic, Hong, Seungbum, Xu, Jimmy. "Geometry- and size-dependence of electrical properties of metal contacts on semiconducting nanowires." J. Appl. Phys., vol. 108, no. 9, 2010, pp. 094308. |
| Lee, D., Park, M. S., Tang, Z., Luo, H., Beresford, R., Wie, C. R. "Characterization of metamorphic In[sub x]Al[sub 1−x]As∕GaAs buffer layers using reciprocal space mapping." J. Appl. Phys., vol. 101, no. 6, 2007, pp. 063523. |
| Beresford, R. "Conserved flux in interband tunneling." Solid-State Electronics, vol. 51, no. 1, 2007, pp. 136-141. |
| Guico, Rodney S., Tzolov, Marian, Guo, Wei, Cloutier, Sylvain G., Beresford, Roderic, Xu, Jimmy. "Fabrication and optical characterization of highly ordered InAs∕GaAs quantum dots on nonlithographically patterned substrates." J. Vac. Sci. Technol. B, vol. 25, no. 3, 2007, pp. 1093. |
| Guo, W., Guico, R. S., Xu, J. M., Beresford, R. "Kinetic Monte Carlo simulation of InAs quantum dot growth on nonlithographically patterned substrates." J. Vac. Sci. Technol. B, vol. 25, no. 3, 2007, pp. 1072. |
| Guo, W., Guico, R.S., Beresford, R., Xu, J.M. "Growth of highly ordered relaxed InAs/GaAs quantum dots on non-lithographically patterned substrates by molecular beam epitaxy." Journal of Crystal Growth, vol. 287, no. 2, 2006, pp. 509-513. |
| Yaglioglu, B., Yeom, H. Y., Beresford, R., Paine, D. C. "High-mobility amorphous In[sub 2]O[sub 3]–10 wt %ZnO thin film transistors." Appl. Phys. Lett., vol. 89, no. 6, 2006, pp. 062103. |
| Triroj, Napat, Lapierre-Devlin, Melissa A., Kelley, Shana O., Beresford, Roderic. "Microfluidic Three-Electrode Cell Array for Low-Current Electrochemical Detection." IEEE Sensors Journal, vol. 6, no. 6, 2006, pp. 1395-1402. |
| Lynch, C., Chason, E., Beresford, R. "Mobile dislocation density and strain relaxation rate evolution during In[sub x]Ga[sub 1−x]As∕GaAs heteroepitaxy." J. Appl. Phys., vol. 100, no. 1, 2006, pp. 013525. |
| Wang, D. P., Perkins, B. R., Yin, A. J., Zaslavsky, A., Xu, J. M., Beresford, R., Snider, G. L. "Carbon nanotube gated lateral resonant tunneling field-effect transistors." Appl. Phys. Lett., vol. 87, no. 15, 2005, pp. 152102. |
| Sheldon, Brian W., Rajamani, Ashok, Bhandari, Abhinav, Chason, Eric, Hong, S. K., Beresford, R. "Competition between tensile and compressive stress mechanisms during Volmer-Weber growth of aluminum nitride films." J. Appl. Phys., vol. 98, no. 4, 2005, pp. 043509. |
| Lynch, C., Chason, E., Beresford, R. "Enhanced strain relaxation rate of InGaAs by adatom-assisted dislocation kink nucleation." J. Vac. Sci. Technol. B, vol. 23, no. 3, 2005, pp. 1166. |
| Lynch, C., Chason, E., Beresford, R., Freund, L. B., Tetz, K., Schwarz, K. W. "Limits of strain relaxation in InGaAs∕GaAs probed in real time by in situ wafer curvature measurement." J. Appl. Phys., vol. 98, no. 7, 2005, pp. 073532. |
| Liang, Jianyu, Luo, Hailin, Beresford, Rod, Xu, Jimmy. "A growth pathway for highly ordered quantum dot arrays." Appl. Phys. Lett., vol. 85, no. 24, 2004, pp. 5974. |
| Beresford, R. "Full-zone k⋅p method of band structure calculation for wurtzite semiconductors." J. Appl. Phys., vol. 95, no. 11, 2004, pp. 6216. |
| Lynch, C., Chason, E., Beresford, R., Hong, S. K. "Influence of growth flux and surface supersaturation on InGaAs/GaAs strain relaxation." Appl. Phys. Lett., vol. 84, no. 7, 2004, pp. 1085. |
| Lynch, C., Beresford, R., Chason, E. "Real-time stress evolution during growth of In[sub x]Al[sub 1−x]As/GaAs metamorphic buffer layers." J. Vac. Sci. Technol. B, vol. 22, no. 3, 2004, pp. 1539. |
83. Epitaxial Silicon Dots Self-Assembled on Aluminum Nitride / Si(111),Y. Cheng and R. Beresford, Nano Lett. 13, 614 (2013).
82. Growth of AlN/SiC/AlN quantum wells on Si(111) by molecular beam epitaxy, Y. Cheng and R. Beresford, Appl. Phys. Lett. 100, 232112 (2012).
81. Gas-Assisted Focused Ion Beam Fabrication of Gold Nanoelectrode Arrays in Electron-Beam Evaporated Alumina Films for Biosensing Applications, N. Triroj, P. Jaroenapibal, and R. Beresford, 14th International Meeting on Chemical Sensors (2012). doi:10.5162/IMCS2012/1.2.4.
80. Evaluation of Metal-Nanowire Electrical Contacts by Measuring Contact End Resistance, H. Park, R. Beresford, R. Ha, H.-J. Choi, H. Shin, and J. Xu, Nanotechnology 23, 245201 (2012).
79. Effects of Electrical Contacts on the Photoconductive Gain of Nanowire Photodetectors, H. Park, J. H. Kim, R. Beresford, and J. Xu, Appl. Phys. Lett. 99, 143110 (2011).
78. Microfluidic Chip-Based Nanoelectrode Array as Miniaturized Biochemical Sensing Platform for Prostate-Specific Antigen Detection, N. Triroj, P. Jaroenapibal, H. Shi, J.I. Yeh and R. Beresford, Biosensors and Bioelectronics 26, 2927 (2011).
77. Geometry- and Size-Dependence of Electrical Properties of Metal Contacts on Semiconducting Nanowires, H. Park, R. Beresford, S. Hong, and J. Xu, J. Appl. Phys. 108, 094308 (2010).
76. Fabrication and Optical Characterization of Highly Ordered InAs/GaAs Quantum Dots on Nonlithographically Patterned Substrates, R.S. Guico, M. Tzolov, W. Guo, S.G. Cloutier, R. Beresford, and J. Xu, J. Vac. Sci. Technol. B 25, 1093 (2007).
75. Kinetic Monte Carlo Simulation of InAs Quantum Dot Growth on Nonlithographically Patterned Substrates, W. Guo, R. S. Guico, J. M. Xu, and R. Beresford, J. Vac. Sci. Technol. B 25, 1072 (2007).
74. Characterization of Metamorphic InxAl1–xAs/GaAs Buffer Layers Using Reciprocal Space Mapping, D. Lee, M.S. Park, Z. Tang, H. Luo, R. Beresford, and C.R. Wie, J. Appl. Phys. 101, 063523 (2007).
73. Conserved Flux in Interband Tunneling, R. Beresford, Solid State Electronics 51, 136 (2007).
72. High-Mobility Amorphous In2O3–10 wt %ZnO Thin Film Transistors, B. Yaglioglu, H. Y. Yeom, R. Beresford, and D. C. Paine, Appl. Phys. Lett. 89, 062103 (2006).
71. Microfluidic Three-Electrode Cell Array for Low-Current Electrochemical Detection, N. Triroj, M.A. Lapierre-Devlin, S.O. Kelley, and R. Beresford, IEEE Sensors Journal 6, 1395 (2006).
70. Mobile Dislocation Density and Strain Relaxation Rate Evolution During InxGa1–xAs/GaAs Heteroepitaxy, C. Lynch, E. Chason, and R. Beresford, J. Appl. Phys. 100, 013525 (2006).
69. Growth of Highly Ordered Relaxed InAs/GaAs Quantum Dots on Non-lithographically Patterned Substrates by Molecular Beam Epitaxy, W. Guo, R.S. Guico, R. Beresford, and J.M. Xu, J. Crystal Growth 287, 509 (2006).
68. The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3–10 wt% ZnO) Based Thin Film Transistors, R. Beresford, D. Paine, B. Yaglioglu, and H. Yeom, MRS Proceedings 905, 19 (2005).
67. Carbon Nanotube Gated Lateral Resonant Tunneling Field-Effect Transistors, D.P. Wang, B.R. Perkins, A.J. Yin, A. Zaslavsky, J.M. Xu, R. Beresford, and G. L. Snider, Appl. Phys. Lett. 87, 152102 (2005).
66. Limits of Strain Relaxation in InGaAs/GaAs Probed in Real Time by In Situ Wafer Curvature Measurement, C. Lynch, E. Chason, R. Beresford, L.B. Freund, K. Tetz, and K.W. Schwarz, J. Appl. Phys. 98, 073532 (2005).
65. Response to "Comment on 'A growth pathway for highly ordered quantum dot arrays' " [Appl. Phys. Lett. 86, 206101 (2005)] , R. Beresford and J. M. Xu, Appl. Phys. Lett. 86, 206102 (2005).
64. Enhanced Strain Relaxation Rate of InGaAs by Adatom-Assisted Dislocation Kink Nucleation, C. Lynch, E. Chason, and R. Beresford, J. Vac. Sci. Technol. B 23, 1166 (2005).
63. Competition Between Tensile and Compressive Stress Mechanisms during Volmer-Weber Growth of Aluminum Nitride Films, B.W. Sheldon, A. Rajamani, A. Bhandari, E. Chason, S.K. Hong, and R. Beresford, J. Appl. Phys. 98, 043509 (2005).
62. A Growth Pathway for Highly Ordered Quantum Dot Arrays, J. Liang, H. Luo, R. Beresford, and J.M. Xu, Appl. Phys. Lett. 85, 5974 (2004).
61. Full-Zone k×p Method of Band Structure Calculation for Wurtzite Semiconductors, R. Beresford, J. Appl. Phys. 95, 6216 (2004).
60. Real-Ttime Stress Evolution during Growth of InxAl1–xAs/GaAs Metamorphic Buffer Layers, C. Lynch, R. Beresford, and E. Chason, J. Vac. Sci. Technol. B 22, 1539 (2004).
59. Influence of Growth Flux and Surface Superaturation on InGaAs/GaAs Strain Relaxation, C. Lynch, E. Chason, R. Beresford, and S.K. Hong, Appl. Phys. Lett. 84 1085 (2004).
58. Analysis of the Thin-Oxide Growth Kinetic Equation, R. Beresford, Semicond. Sci. Technol. 18, 973 (2003).
57. Nanoheteroepitaxy of GaN on a Nanopore Array Si Surface, J. Liang, S.-K. Hong, N. Kouklin, R. Beresford, and J. M. Xu, Appl. Phys. Lett. 83, 1752 (2003).
56. Intrinsic Compressive Stress in Polycrystalline Films with Negligible Grain Boundary Diffusion, B.W. Sheldon, A. Ditkowski, R. Beresford, E. Chason, and J. Rankin, J. Appl. Phys. 94, 948 (2003).
55. Kinetics of Dislocation-Mediated Strain Relaxation in InGaAs/GaAs Heteroepitaxy, R. Beresford, C. Lynch, and E. Chason, J. Crystal Growth 251, 106 (2003).
54. Dislocation Structure and Relaxation Kinetics in InGaAs/GaAs Heteroepitaxy, C. Lynch, E. Chason, R. Beresford, E.B. Chen, and D.C. Paine, J. Vac. Sci. Technol. B 20, 1247 (2002).
53. Intrinsic Stress Evolution in Aluminum Nitride Thin Films and the Influence of Multistep Processing, A. Rajamani, R. Beresford, and B.W. Sheldon, Appl. Phys. Lett. 79, 3776 (2001).
52. Metastability of InGaAs/GaAs Probed by In Situ Optical Stress Sensor, R. Beresford, K. Tetz, J. Yin, E. Chason, and M.U. González, J. Vac. Sci. Technol. B 19, 1572 (2001).
51. Real-Time Measurements of Stress Relaxation in InGaAs/GaAs, R. Beresford, J. Yin, K. Tetz, and E. Chason, J. Vac. Sci. Technol. B 18, 1431 (2000).
50. In Situ Measurements of Stress Relaxation During Strained Layer Heteroepitaxy, E. Chason, J. Yin, K. Tetz, R. Beresford, L. Freund, M. Gonzalez, and J. Floro, MRS Proceedings, 583, 167 (1999).
49. A Study of Low Temperature Crystallization of Amorphous Thin Film Indium Tin Oxide, D.C. Paine, T. Whitson, D. Janiac, R. Beresford, C. Ow-Yang, and B. Lewis, J. Appl. Phys. 85, 8445 (1999).
48. Microstructure and Composition of InAsN Alloys Grown by Plasma-Source Molecular Beam Epitaxy, R. Beresford, K.S. Stevens, and A.F. Schwartzman, J. Vac. Sci. Technol. B 16, 1293 (1998).
47. Investigation of the Annealing Texture Evolution in Hafnium, R. Bai, C.L. Briant, D.C. Paine, and J.R. Beresford, Metallurgical and Mat. Trans. A 29, 757 (1998).
46. The Effect of the III/V Ratio and Substrate Temperature on the Morphology and Properties of GaN- and AlN-Layers Grown by Molecular Beam Epitaxy on Si(111), M.A. Sanchez-Garcia, E. Calleja, E.Monroy, F.J. Sanchez, F.Calle, E. Munoz, and R. Beresford, J. Cryst. Growth 183, 23 (1998).
45. Exciton and Donor-Acceptor Recombination in Undoped GaN on Si(111), F. Calle, F.J. Sanchez, J.M.G. Tijero, M.A. Sanchez-Garcia, E. Calleja, and R. Beresford, Semicond. Sci. Technol. 12, 1396 (1997).
44. High Growth Rate (0.8 mm/hr) of GaN in Plasma‑Source Molecular Beam Epitaxy, R. Beresford, K.S. Stevens, Q. Cui, and H. Cheng, Proc. Mater. Res. Soc. 449, 361 (1997).
43. Feasibility of the Synthesis of AlAsN and GaAsN Films by Plasma‑Source Molecular Beam Epitaxy, G. Mendoza‑Diaz, K.S. Stevens, A.F. Schwartzman, and R. Beresford, J. Cryst. Growth 178, 45 (1997).
42. Group IV‑B Refractory Metal Crystals as Lattice‑Matched Substrates for Growth of the Group III Nitrides by Plasma‑Source Molecular Beam Epitaxy, R. Beresford, D.C. Paine, and C.L. Briant, J. Cryst. Growth 178, 189 (1997).
41. Epitaxial Growth of GaN on Lattice‑Matched Hafnium. Substrates, R. Beresford, K.S. Stevens, C. Briant, R. Bai, and D.C. Paine, Proc. Mater. Res. Soc. 395, 55 (1996).
40. Problems and Prospects in the Analysis of Epitaxial Growth of the Wide Bandgap Group III Nitrides, R. Beresford, Computational Mater. Sci. 6, 113 (1996).
39. Material and Device Characteristics of MBE-Grown GaN Using a New rf Plasma Source, R. Beresford, K. Stevens, Q. Cui, A. Schwartzman, and H. Cheng, MRS Proceedings 449, 361 (1996).
38. Downstream Ion Drift in an Electron Cyclotron Resonance Plasma Process, R. Beresford, J. Appl. Phys. 79, 1292 (1996).
37. Optical and Electrical Characterization of GaN Layers Grown on Silicon and Sapphire Substrates, M.A. Sanchez‑Garcia, F.J. Sanchez, F. Calle, E. Munoz, E. Calleja, K.S. Stevens, M. Kinniburgh, R. Beresford, and P. Gibart, Solid State Electronics 40, 81 (1996).
36. Photoconductive Ultraviolet Sensor Using Mg‑Doped GaN on Si(l 11), K.S. Stevens, M. Kinniburgh, and R. Beresford, Appl. Phys. Lett. 66, 3518 (1995).
35. Demonstration of a Silicon Field‑Effect Transistor Using AlN as the Gate Dielectric, K.S. Stevens, M. Kinniburgh, A. Ohtani, A.F. Schwartzman, and R. Beresford, Appl. Phys. Lett. 66, 3179 (1995).
34. Influence of Substrate Electrical Bias on the Growth of GaN in Plasma‑Assisted Epitaxy, R. Beresford, A. Ohtani, K.S. Stevens, and M. Kinniburgh, J. Vac. Sci. Technol. B 13, 792 (1995).
33. Analysis and Optimization of the Electron Cyclotron Resonance Plasma for Nitride Epitaxy, A. Ohtani, K.S. Stevens, M. Kinniburgh, and R. Beresford, J. Cryst. Growth. 150, 902 (1995).
32. Microstructure of AlN on Si (111) Grown by Plasma‑Assisted Molecular Beam Epitaxy, K.S. Stevens, A. Ohtani, M. Kinniburgh, and R. Beresford, Appl. Phys. Lett. 65, 321 (1994).
31. Microstructure and Photoluminescence of GaN Grown on Si (111) by Plasma‑Assisted Molecular Beam Epitaxy, A. Ohtani, K.S. Stevens, and R. Beresford, Appl. Phys. Lett. 65, 61 (1994).
30. Envelope Functions for a Three‑Band Semiconductor in a Uniform Electric Field, R. Beresford, Phys. Rev. B 49, 13663 (1994).
29. Growth and Characterization of GaN on Si (111), A. Ohtani, K.S. Stevens, and R. Beresford, Proc. Mater. Res. Soc. 339, 471 (1994).
28. Growth of Group III Nitrides on Si (111) by Plasma‑Assisted Molecular Beam Epitaxy, K.S. Stevens, A. Ohtani, A.F. Schwartzman, and R. Beresford, J. Vac. Sci. Technol. B 12, 1186 (1994).
27. Growing GaN by Plasma‑Assisted Molecular Beam Epitaxy, R. Beresford, Minerals, Metals, and Materials Soc. 46, 54 (1994).
26. Exact Eigenfunctions of a Two‑Band Semiconductor in a Uniform Electric Field, R. Beresford, Semiconductor Sci. and Technol. 8, 1957 (1993).
25. Intersubband Transitions in Piezoelectric Superlattices, G. Brozak, B.V. Shanabrook, D. Gammon, D.A. Broido, R. Beresford, and W.I. Wang, Surf. Sci. 267, 120 (1992).
24. Effects of Nonparabolicity on Collective Intersubband Excitations, G. Brozak, B.V. Shanabrook, D. Gammon, D.A. Broido, R. Beresford, and W.I. Wang, Phys. Rev. B 45, 11399 (1992).
23. Statistical Properties of an Ideal Nonparabolic: Fermi Gas, R. Beresford, J. Appl. Phys. 70, 6834 (1991).
22. Analytical Approximations for the Fermi Energy of an Ideal Fermi Gas Obeying a Nonparabolic Dispersion Relation, R. Beresford, J. Appl. Phys. 70, 5156 (1991).
21. Resonant Interband Coupling in Single‑Barrier Heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb, L.F. Luo, R. Beresford, and W.I. Wang, J. Appl. Phys. 68, 2854 (1990).
20. A Complementary Heterostructure Field‑Effect Transistor Technology Based on InAs/AlSb/GaSb, K.F. Longenbach, R. Beresford, and W.I. Wang, IEEE Trans. on Electron Devices 37, 2265 (1990).
19. Optically Induced Variability of the Strain Induced Electric Fields in (111) GaSb/AlSb Quantum Wells, B.V. Shanabrook, D. Gammon, R. Beresford, W.I. Wang, R.P. Leavitt, and D.A. Broido, Superlattt. Microstruct. 7, 363 (1990).
18. Application of Dual‑Gate and Split‑Gate Field‑Effect Transistor Designs to InAs Field Effect Transistors, K.F. Longenbach, R. Beresford, and W.I. Wang, Solid State Electronics 33, 1211 (1990).
17. Narrow Gap InAs for Heterostructure Tunneling, R. Beresford, L.F. Luo, and W.I. Wang, Semiconductor Science and Technology 5, 195 (1990).
16. Surface Structures of the (Al, Ga)Sb System, J. Piao, R. Beresford, and W.I. Wang, J. Vac. Sci. Technol. B 8, 276 (1990).
15. MBE Growth of Metastable Ge‑Sn Alloys, J. Piao, R. Beresford, W.I. Wang, and H. Homma, J. Vac. Sci. Technol. B 8, 221 (1990).
14. Interband Tunneling through Single‑Barrier InAs/AlSb/GaSb Heterostructures, R. Beresford, L.F. Luo, K.F. Longenbach, and W.I. Wang, Appl. Phys. Lett. 56, 952 (1990).
13. Resonant Interband Tunneling Device with Multiple Negative Differential Resistance Regions, R. Beresford, L.F. Luo, K.F. Longenbach, and W.I. Wang, Electron Device Lett. 11, 110 (1990).
12. Interband Resonant Tunneling through a 110‑mn InAs Quantum Well, R. Beresford, L.F. Luo, and W.I. Wang, Appl. Phys. Lett. 56, 551 (1990).
11. Magnetoresistance Measurements of Doping Symmetry and Strain Effects in GaSb/AlSb Quantum Wells, W. Hansen, T.P. Smith III, J. Piao, R. Beresford, and W.I. Wang, Appl. Phys. Lett. 56, 81 (1990).
10. Polytype Heterostructures for Electron Tunneling Devices, R. Beresford, L.F. Luo, K. Longenbach, and W.I. Wang, Digest of Technical Papers, 1989 International Electron Devices Meeting, Washington D.C., December 3‑6, 1989.
9. Interband Tunneling in Polytype Heterostructures, L.F. Luo, R. Beresford, and W.I. Wang, Appl. Phys. Lett. 55, 2023 (1989).
8. Band Structure Engineering for Electron Tunneling in Heterostructures, R. Beresford, L.F. Luo, and W.I. Wang, IEEE Trans. on Electron Devices 36, 2618 (1989).
7. Resonant Tunneling through X‑Valley States in GaAs/AlAs/GaAs Single‑Barrier Heterostructures, R. Beresford, L.F. Luo, W.I. Wang, and E.E. Mendez, Appl. Phys. Lett. 55, 1555 (1989).
6. Heterojunction Field‑Effect Transistors Based on AlGaSb/InAs, L.F. Luo, R. Beresford, W.I. Wang, and H. Munekata, Appl. Phys. Lett. 55, 789 (1989).
5. Resonant Tunneling of Holes in AlSb/GaSb/AlSb Double‑Barrier Heterostructures, R. Beresford, L.F. Luo, and W.L Wang, Appl. Phys. Lett. 55, 694 (1989).
4. Inelastic Tunneling in (111) Oriented AlAs/GaAs/AlAs Double‑Barrier Heterostructures, L.F. Luo, R. Beresford, W.I. Wang, and E.E. Mendez, Appl. Phys. Lett 54, 2133 (1989).
3. Negative Differential Resistance in AlGaSb/InAs Single‑Barrier Heterostructures at Room Temperature, R. Beresford, L.F. Luo, and W.I. Wang, Appl. Phys. Lett. 54, 1899 (1989).
2. Resonant Tunneling in A1Sb/InAs/AlSb Double‑Barrier Heterostructures, L.F. Luo, R. Beresford, and W.I. Wang, Appl. Phys. Lett. 53, 2320 (1988).
1. High‑Speed Split‑Emitter I2L/MTL Memory Cell, S.K. Wiedmann, D.D. Tang, and R. Beresford, IEEE J. Solid State Circuits 16, 429 (1981).
| Year | Degree | Institution |
|---|---|---|
| 1990 | PhD | Columbia University |
| 1981 | MS | Yale University |
| 1979 | BS | Yale University |
| Name | Title |
|---|---|
| Chason, Eric | Professor of Engineering |
| Paine, David | Professor of Engineering, Director of Molecular and Nanoscale Innovation |
| Sheldon, Brian | Professor of Engineering |
| Zia, Rashid | Dean of the College, Professor of Engineering, Professor of Physics |
| ENGN 0510 - Electricity and Magnetism |
| ENGN 1620 - Analysis and Design of Electronic Circuits |
| ENGN 1630 - Digital Electronics Systems Design |
| ENGN 1931A - Photovoltaics Engineering |
| ENGN 2800 - Critical Challenge Project |
