Alex Zaslavsky received his Ph.D. in electrical engineering from Princeton University in 1991, working under Daniel C. Tsui. From 1991 to 1993 he was a postdoctoral scientist at IBM Research, Yorktown Heights. In 1994 he became an Assistant Professor of Engineering at Brown University, where he was promoted to Associate Professor in 2000, and to Full Professor of Engineering and Physics in 2007. He is a recipient of a Sloan Fellowship, an Office of Naval Research Young Investigator award, and a National Science Foundation Career award. In 2000-1 and again in 2007 he spent sabbatical periods at LETI-CEA/Minatec, Grenoble, France, working on silicon-on-insulator technology. During 2009-12 he was a Visiting Senior Chair of Excellence at the Nanosciences Foundation (Grenoble, France). He has also worked at CNRS laboratories in Marseille and Grenoble. He has authored over 150 journal articles and book/conference proceedings chapters, and co-edited 9 books in the microelectronics field. Since 2003 he has been an editor of the Solid State Electronics international journal.
| Donato, Marco, Bahar, R. Iris, Patterson, William R., Zaslavsky, Alexander. "A Sub-Threshold Noise Transient Simulator Based on Integrated Random Telegraph and Thermal Noise Modeling." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 37, no. 3, 2018, pp. 643-656. |
| Siontas, Stylianos, Wang, Haobei, Li, Dongfang, Zaslavsky, Alexander, Pacifici, Domenico. "Broadband visible-to-telecom wavelength germanium quantum dot photodetectors." Applied Physics Letters, vol. 113, no. 18, 2018, pp. 181101. |
| Siontas, Stylianos, Li, Dongfang, Wang, Haobei, A.V.P.S, Aravind, Zaslavsky, Alexander, Pacifici, Domenico. "High-performance germanium quantum dot photodetectors in the visible and near infrared." Materials Science in Semiconductor Processing, 2018. |
| Deng, Jianan, Shao, Jinhai, Lu, Bingrui, Chen, Yifang, Zaslavsky, Alexander, Cristoloveanu, Sorin, Bawedin, Maryline, Wan, Jing. "Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)." IEEE Journal of the Electron Devices Society, vol. 6, 2018, pp. 557-564. |
| Wan, J., Deng, J N., Cao, X Y., Liu, H B., Lu, B R., Chen, Y F., Zaslavsky, A., Cristoloveanu, S., Bawedin, M. "Novel photodetector based on FD-SOI substrate with interface coupling effect." 2018 18th International Workshop on Junction Technology (IWJT), 2018. |
| Deng, J. N., Shao, J. H., Lu, B. R., Chen, Y. F., Zaslavsky, A., Cristoloveanu, S., Bawedin, M., Wan, J. "A novel photodetector based on the interface coupling effect in silicon-on-insulator MOSFETs." 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2017. |
| Lee, Sunghwan, Song, Yang, Park, Hongsik, Zaslavsky, A., Paine, D.C. "Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors." Solid-State Electronics, vol. 135, 2017, pp. 94-99. |
| Umana-Membreno, G.A., Song, Y., Akhavan, N.D., Antoszewski, J., Paine, D.C., Zaslavsky, A., Faraone, L. "Electronic transport parameters of indium zinc oxide thin films after Al 2 O 3 /HfO 2 top-dielectric formation annealing." Microelectronic Engineering, vol. 178, 2017, pp. 164-167. |
| Siontas, Stylianos, Li, Dongfang, Liu, Pei, Aujla, Sartaj, Zaslavsky, Alexander, Pacifici, Domenico. "Low-Temperature Operation of High-Efficiency Germanium Quantum Dot Photodetectors in the Visible and Near Infrared." physica status solidi (a), vol. 215, no. 3, 2017, pp. 1700453. |
| Song, Yang, Katsman, Alexander, Butcher, Amy L., Paine, David C., Zaslavsky, Alexander. "Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors." Solid-State Electronics, vol. 136, 2017, pp. 43-50. |
| Donato, Marco, Bahar, R. Iris, Patterson, William, Zaslavsky, Alexander. "A fast simulator for the analysis of sub-threshold thermal noise transients." Proceedings of the 53rd Annual Design Automation Conference on - DAC '16, 2016. |
| Cristoloveanu, Sorin, Wan, Jing, Zaslavsky, Alexander. "A Review of Sharp-Switching Devices for Ultra-Low Power Applications." IEEE Journal of the Electron Devices Society, vol. 4, no. 5, 2016, pp. 215-226. |
| Han, Xijing, Donato, Marco, Bahar, R. Iris, Zaslavsky, Alexander, Patterson, William. "Design of Error-Resilient Logic Gates with Reinforcement Using Implications." Proceedings of the 26th edition on Great Lakes Symposium on VLSI - GLSVLSI '16, 2016. |
| Song, Yang, Zaslavsky, A., Paine, D.C. "High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO2 gate insulator." Thin Solid Films, vol. 614, 2016, pp. 52-55. |
| Siontas, Stylianos, Liu, Pei, Zaslavsky, Alexander, Pacifici, Domenico. "Noise performance of high-efficiency germanium quantum dot photodetectors." Appl. Phys. Lett., vol. 109, no. 5, 2016, pp. 053508. |
| Liu, Pei, Longo, Paolo, Zaslavsky, Alexander, Pacifici, Domenico. "Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films." J. Appl. Phys., vol. 119, no. 1, 2016, pp. 014304. |
| Cristoloveanu, S., Bawedin, M., Navarro, C., Chang, S.-J., Wan, J., Andrieu, F., Le Royer, C., Rodriguez, N., Gamiz, F., Zaslavsky, A., Kim, Y.-T. "(Invited) Special Memory Mechanisms in SOI Devices." ECS Transactions, vol. 66, no. 5, 2015, pp. 201-210. |
| Donato, Marco, Bahar, R. Iris, Patterson, William, Zaslavsky, Alexander. "A Simulation Framework for Analyzing Transient Effects Due to Thermal Noise in Sub-Threshold Circuits." Proceedings of the 25th edition on Great Lakes Symposium on VLSI - GLSVLSI '15, 2015. |
| Zhang, Peng, Wan, J., Zaslavsky, A., Cristoloveanu, S. "CMOS-compatible FDSOI bipolar-enhanced tunneling FET." 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015. |
| Wan, J., Zaslavsky, A., Cristoloveanu, S. "Comment on “Investigation of tunnel field-effect transistors as a capacitor-less memory cell” [Appl. Phys. Lett. 104, 092108 (2014)]." Appl. Phys. Lett., vol. 106, no. 1, 2015, pp. 016101. |
| Zhang, Peng, Liu, Pei, Siontas, Stylianos, Zaslavsky, A., Pacifici, D., Ha, Jong-Yoon, Krylyuk, S., Davydov, A. V. "Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications." J. Appl. Phys., vol. 117, no. 12, 2015, pp. 125104. |
| Cristoloveanu, S., Wan, J., Ferrari, P., Bawedin, M., Navarro, C., Zaslavsky, A., Le Royer, C., Villalon, A., Fenouillet-Beranger, C., Solaro, Y., Fonteneau, P. "Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices." 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014. |
| Xu, Rui, He, Jian, Song, Yang, Li, Wei, Zaslavsky, A., Paine, D. C. "Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors." Appl. Phys. Lett., vol. 105, no. 9, 2014, pp. 093504. |
| Revelant, Alberto, Villalon, Anthony, Wu, Yan, Zaslavsky, Alexander, Le Royer, Cyrille, Iwai, Hiroshi, Cristoloveanu, Sorin. "Electron-Hole Bilayer TFET: Experiments and Comments." IEEE Trans. Electron Devices, vol. 61, no. 8, 2014, pp. 2674-2681. |
| Zhang, Peng, Le, Son T., Hou, Xiaoxiao, Zaslavsky, A., Perea, Daniel E., Dayeh, Shadi A., Picraux, S. T. "Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor." Appl. Phys. Lett., vol. 105, no. 6, 2014, pp. 062106. |
|
Song, Yang, Xu, Rui, He, Jian, Siontas, Stylianos, Zaslavsky, Alexander, Paine, David C.
"Top-Gated Indium–Zinc–Oxide Thin-Film Transistors With |
| Solaro, Yohann, Wan, Jing, Fonteneau, Pascal, Fenouillet-Beranger, Claire, Le Royer, Cyrille, Zaslavsky, Alexander, Ferrari, Philippe, Cristoloveanu, Sorin. "Z2-FET: A promising FDSOI device for ESD protection." Solid-State Electronics, vol. 97, 2014, pp. 23-29. |
| Cristoloveanu, S., Wan, J., Le Royer, C., Zaslavsky, A. "(Invited) Innovative Sharp Switching Devices." ECS Transactions, vol. 54, no. 1, 2013, pp. 65-75. |
| Wan, Jing, Royer, Cyrille Le, Zaslavsky, Alexander, Cristoloveanu, Sorin. "A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications." Solid-State Electronics, vol. 90, 2013, pp. 2-11. |
| Calleja, E., Cristoloveanu, S., Kuk, Y., Zaslavsky, A. "A word from the editors." Solid-State Electronics, vol. 79, 2013, pp. 1. |
| Wan, J., Zaslavsky, A., Le Royer, C., Cristoloveanu, S. "Novel Bipolar-Enhanced Tunneling FET With Simulated High On-Current." IEEE Electron Device Lett., vol. 34, no. 1, 2013, pp. 24-26. |
| Wan, Jing, Le Royer, Cyrille, Zaslavsky, Alexander, Cristoloveanu, Sorin. "Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage." Solid-State Electronics, vol. 84, 2013, pp. 147-154. |
| Cosentino, S., Mirabella, S., Liu, Pei, Le, Son T., Miritello, M., Lee, S., Crupi, I., Nicotra, G., Spinella, C., Paine, D., Terrasi, A., Zaslavsky, A., Pacifici, D. "Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology." Thin Solid Films, vol. 548, 2013, pp. 551-555. |
| Cristoloveanu, S., Wan, J., Le Royer, C., Zaslavsky, A. "Sharp Switching SOI Devices." ECS Transactions, vol. 53, no. 5, 2013, pp. 3-13. |
| Zaslavsky, A., Wan, J., Le, S. T., Jannaty, P., Cristoloveanu, S., Le Royer, C., Perea, D. E., Dayeh, S. A., Picraux, S. T. "Sharp-Switching High-Current Tunneling Devices." ECS Transactions, vol. 53, no. 5, 2013, pp. 63-74. |
| Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. "A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration." IEEE Electron Device Lett., vol. 33, no. 2, 2012, pp. 179-181. |
| Wan, J., Cristoloveanu, S., Le Royer, C., Zaslavsky, A. "A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection." Solid-State Electronics, vol. 76, 2012, pp. 109-111. |
| Donato, Marco, Cremona, Fabio, Jin, Warren, Bahar, R. Iris, Patterson, William, Zaslavsky, Alexander, Mundy, Joseph. "A noise-immune sub-threshold circuit design based on selective use of Schmitt-trigger logic." Proceedings of the great lakes symposium on VLSI - GLSVLSI '12, 2012. |
| Le, Son T., Jannaty, P., Luo, Xu, Zaslavsky, A., Perea, Daniel E., Dayeh, Shadi A., Picraux, S. T. "Axial SiGe Heteronanowire Tunneling Field-Effect Transistors." Nano Letters, vol. 12, no. 11, 2012, pp. 5850-5855. |
| Liu, P., Le, S. T., Lee, S., Paine, D., Zaslavsky, A., Pacifici, D., Cosentino, S., Mirabella, S., Miritello, M., Crupi, I., Terrasi, A. "Fast, high-efficiency Germanium quantum dot photodetectors." 2012 Lester Eastman Conference on High Performance Devices (LEC), 2012. |
| Cristoloveanu, S., Bawedin, M., Wan, J., Chang, S.-J., Navarro, C., Zaslavsky, A., Le Royer, C., Andrieu, F., Rodriguez, N., Gamiz, F. "Innovative capacitorless SOI DRAMs." 2012 IEEE International SOI Conference (SOI), 2012. |
| Jannaty, Pooya, Sabou, Florian C., Le, Son T., Donato, Marco, Bahar, R. Iris, Patterson, William, Mundy, Joseph, Zaslavsky, Alexander. "Shot-Noise-Induced Failure in Nanoscale Flip-Flops Part II: Failure Rates in 10-nm Ultimate CMOS." IEEE Trans. Electron Devices, vol. 59, no. 3, 2012, pp. 807-812. |
| Jannaty, Pooya, Sabou, Florian C., Le, Son T., Donato, Marco, Donato, R. Iris, Donato, William, Mundy, Joseph, Zaslavsky, Alexander. "Shot-Noise-Induced Failure in Nanoscale Flip-Flops—Part I: Numerical Framework." IEEE Trans. Electron Devices, vol. 59, no. 3, 2012, pp. 800-806. |
| Liu, Pei, Cosentino, S., Le, Son T., Lee, S., Paine, D., Zaslavsky, A., Pacifici, D., Mirabella, S., Miritello, M., Crupi, I., Terrasi, A. "Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors." J. Appl. Phys., vol. 112, no. 8, 2012, pp. 083103. |
| Wan, Jing, Le Royer, Cyrille, Zaslavsky, Alexander, Cristoloveanu, Sorin. "Z2-FET used as 1-transistor high-speed DRAM." 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012. |
| Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. "Z2-FET: A zero-slope switching device with gate-controlled hysteresis." Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012. |
| Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. "A tunneling field effect transistor model combining interband tunneling with channel transport." J. Appl. Phys., vol. 110, no. 10, 2011, pp. 104503. |
| Jannaty, Pooya, Sabou, Florian Cosmin, Bahar, R. Iris, Mundy, Joseph, Patterson, William R., Zaslavsky, Alexander. "Full Two-Dimensional Markov Chain Analysis of Thermal Soft Errors in Subthreshold Nanoscale CMOS Devices." IEEE Transactions on Device and Materials Reliability, vol. 11, no. 1, 2011, pp. 50-59. |
| Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. "Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET." Microelectronic Engineering, vol. 88, no. 7, 2011, pp. 1301-1304. |
| Cosentino, S., Liu, Pei, Le, Son T., Lee, S., Paine, D., Zaslavsky, A., Pacifici, D., Mirabella, S., Miritello, M., Crupi, I., Terrasi, A. "High-efficiency silicon-compatible photodetectors based on Ge quantum dots." Appl. Phys. Lett., vol. 98, no. 22, 2011, pp. 221107. |
| Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. "Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling." Solid-State Electronics, vol. 65-66, 2011, pp. 226-233. |
| Le, Son T., Jannaty, P., Zaslavsky, A., Dayeh, S. A., Picraux, S. T. "Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires." Appl. Phys. Lett., vol. 96, no. 26, 2010, pp. 262102. |
| Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. "Low-frequency noise behavior of tunneling field effect transistors." Appl. Phys. Lett., vol. 97, no. 24, 2010, pp. 243503. |
| Jannaty, Pooya, Sabou, Florian C., Bahar, R. Iris, Mundy, Joseph, Patterson, William R., Zaslavsky, Alexander. "Numerical queue solution of thermal noise-induced soft errors in subthreshold CMOS devices." Proceedings of the 20th symposium on Great lakes symposium on VLSI - GLSVLSI '10, 2010. |
| Goodnick, Stephen, Korkin, Anatoli, Krstic, Predrag, Mascher, Peter, Preston, John, Zaslavsky, Alex. "Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications." Nanotechnology, vol. 21, no. 13, 2010, pp. 130201. |
| Wan, Jing, Le Royer, Cyrille, Zaslavsky, Alexander, Cristoloveanu, Sorin. "SOI TFETs: Suppression of ambipolar leakage and low-frequency noise behavior." 2010 Proceedings of the European Solid State Device Research Conference, 2010. |
| Jannaty, Pooya, Sabou, Florian C., Gadlage, Matthew, Bahar, R. Iris, Mundy, Joseph, Patterson, William, Reed, Robert A., Weller, Robert A., Schrimpf, Ronald D., Zaslavsky, Alexander. "Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS Devices." IEEE Trans. Nucl. Sci., 2010. |
| Sabou, F.C., Kazazis, D., Bahar, R.I., Mundy, J., Patterson, W.R., Zaslavsky, A. "Markov Chain Analysis of Thermally Induced Soft Errors in Subthreshold Nanoscale CMOS Circuits." IEEE Transactions on Device and Materials Reliability, vol. 9, no. 3, 2009, pp. 494-504. |
| Kazazis, D., Guha, S., Bojarczuk, N. A., Zaslavsky, A., Kim, H.-C. "Substrate Fermi level effects in photocatalysis on oxides: Properties of ultrathin TiO[sub 2]/Si films." Appl. Phys. Lett., vol. 95, no. 6, 2009, pp. 064103. |
| Kazazis, D., Jannaty, P., Zaslavsky, A., Le Royer, C., Tabone, C., Clavelier, L., Cristoloveanu, S. "Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator." Appl. Phys. Lett., vol. 94, no. 26, 2009, pp. 263508. |
| Goldman, V. J., Liu, Jun, Zaslavsky, A. "Electron tunneling spectroscopy of a quantum antidot in the integer quantum Hall regime." Physical Review B, vol. 77, no. 11, 2008. |
| Nepal, K., Bahar, R. I., Mundy, J., Patterson, W. R., Zaslavsky, A. "Designing Nanoscale Logic Circuits Based on Markov Random Fields." Journal of Electronic Testing, vol. 23, no. 2-3, 2007, pp. 255-266. |
| Wang, D.P., Feldman, D.E., Perkins, B.R., Yin, A.J., Wang, G.H., Xu, J.M., Zaslavsky, A. "Hopping conduction in disordered carbon nanotubes." Solid State Communications, vol. 142, no. 5, 2007, pp. 287-291. |
| Zaslavsky, A., Soliveres, S., Le Royer, C., Cristoloveanu, S., Clavelier, L., Deleonibus, S. "Negative transconductance in double-gate germanium-on-insulator field effect transistors." Appl. Phys. Lett., vol. 91, no. 18, 2007, pp. 183511. |
| Luryi, S., Zaslavsky, A. "Nonclassical devices in SOI: Genuine or copyright from III–V." Solid-State Electronics, vol. 51, no. 2, 2007, pp. 212-218. |
| Nepal, K., Bahar, R. I., Mundy, J., Patterson, W. R., Zaslavsky, A. "Techniques for Designing Noise-Tolerant Multi-Level Combinational Circuits." 2007 Design, Automation & Test in Europe Conference & Exhibition, 2007. |
| Li, H., Mundy, J., Patterson, W., Kazazis, D., Zaslavsky, A., Bahar, R. I. "Thermally-induced soft errors in nanoscale CMOS circuits." 2007 IEEE International Symposium on Nanoscale Architectures, 2007. |
| Nepal, K., Bahar, R.I., Mundy, J., Patterson, W.R., Zaslavsky, A. "Designing MRF based Error Correcting Circuits for Memory Elements." Proceedings of the Design Automation & Test in Europe Conference, 2006. |
| Nepal, K., Bahar, R.I., Mundy, J., Patterson, W.R., Zaslavsky, A. "MRF Reinforcer: A Probabilistic Element for Space Redundancy in Nanoscale Circuits." IEEE Micro, vol. 26, no. 5, 2006, pp. 19-27. |
| Kazazis, D., Zaslavsky, A., Tutuc, E., Bojarczuk, N.A., Guha, S. "Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs." 2006 International SiGe Technology and Device Meeting, 2006. |
| Kazazis, D., Zaslavsky, A., Tutuc, E., Bojarczuk, N.A., Guha, S. "Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs." 2006 International SiGe Technology and Device Meeting, 2006. |
| Kazazis, D., Zaslavsky, A., Tutuc, E., Bojarczuk, N.A., Guha, S. "Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs." 2006 International SiGe Technology and Device Meeting, 2006. |
| Kazazis, D, Zaslavsky, A, Tutuc, E, Bojarczuk, N A, Guha, S. "Negative differential resistance in ultrathin Ge-on-insulator FETs." Semiconductor Science and Technology, vol. 22, no. 1, 2006, pp. S1-S4. |
| LURYI, SERGE, ZASLAVSKY, ALEX. "ON THE POSSIBILITY OF AN INTERSUBBAND LASER IN SILICON-ON-INSULATOR." International Journal of High Speed Electronics and Systems, vol. 16, no. 02, 2006, pp. 411-420. |
| Nepal, K., Bahar, R. I., Mundy, J., Patterson, W. R., Zaslavsky, A. "Optimizing noise-immune nanoscale circuits using principles of Markov random fields." Proceedings of the 16th ACM Great Lakes symposium on VLSI - GLSVLSI '06, 2006. |
| Wang, D. P., Biga, F. Y., Zaslavsky, A., Crawford, G. P. "P-71: Robust-Stretchable Interconnects for Flexible Display Applications." SID Symposium Digest, vol. 37, no. 1, 2006, pp. 466. |
| Wang, Guohua, Tambe, D. T., Zaslavsky, A., Shenoy, V. B. "Quantum confinement induced by strain relaxation in an elliptical double-barrier Si ∕ Si x Ge 1 − x resonant tunneling quantum dot." Physical Review B, vol. 73, no. 11, 2006. |
| Wang, D. P., Perkins, B. R., Yin, A. J., Zaslavsky, A., Xu, J. M., Beresford, R., Snider, G. L. "Carbon nanotube gated lateral resonant tunneling field-effect transistors." Appl. Phys. Lett., vol. 87, no. 15, 2005, pp. 152102. |
| Ohata, A., Pretet, J., Cristoloveanu, S., Zaslavsky, A. "Correct Biasing Rules for Virtual DG Mode Operation in SOI-MOSFETs." IEEE Trans. Electron Devices, vol. 52, no. 1, 2005, pp. 124-125. |
| Nepal, K., Bahar, R.I., Mundy, J., Patterson, W.R., Zaslavsky, A. "Designing logic circuits for probabilistic computation in the presence of noise." Proceedings. 42nd Design Automation Conference, 2005., 2005. |
| Nepal, K., Bahar, R. I., Mundy, J., Patterson, W. R., Zaslavsky, A. "Designing logic circuits for probabilistic computation in the presence of noise." Proceedings of the 42nd annual conference on Design automation - DAC '05, 2005. |
| Perkins, B. R., Wang, D. P., Soltman, D., Yin, A. J., Xu, J. M., Zaslavsky, A. "Differential current amplification in three-terminal Y-junction carbon nanotube devices." Appl. Phys. Lett., vol. 87, no. 12, 2005, pp. 123504. |
| Wang, D. P., Biga, Frederick Y., Zaslavsky, A., Crawford, Gregory P. "Electrical resistance of island-containing thin metal interconnects on polymer substrates under high strain." J. Appl. Phys., vol. 98, no. 8, 2005, pp. 086107. |
| Goldman, V. J., Liu, Jun, Zaslavsky, A. "Fractional statistics of Laughlin quasiparticles in quantum antidots." Physical Review B, vol. 71, no. 15, 2005. |
| Preisler, E. J., Guha, S., Perkins, B. R., Kazazis, D., Zaslavsky, A. "Ultrathin epitaxial germanium on crystalline oxide metal-oxide-semiconductor-field-effect transistors." Appl. Phys. Lett., vol. 86, no. 22, 2005, pp. 223504. |
| Zaslavsky, Alex. "A word from the new Editor." Solid-State Electronics, vol. 48, no. 1, 2004, pp. 1. |
| Luryi, S., Zaslavsky, A. "Blue sky in SOI: new opportunities for quantum and hot-electron devices." Solid-State Electronics, vol. 48, no. 6, 2004, pp. 877-885. |
| Aydin, C., Zaslavsky, A., Luryi, S., Cristoloveanu, S., Mariolle, D., Fraboulet, D., Deleonibus, S. "Lateral interband tunneling transistor in silicon-on-insulator." Appl. Phys. Lett., vol. 84, no. 10, 2004, pp. 1780. |
S. Luryi, J. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: Up the Nano Creek, Wiley Interscience, New York (2007).
A. Zaslavsky, S. Soliveres, C. Le Royer, S. Cristoloveanu, L. Clavelier, and S. Deleonibus, "Negative transconductance in double-gate germanium-on-insulator field effect transistors", Appl. Phys. Lett. 91, 183511 (2007).
G. H. Wang, D. T. Tambe, A. Zaslavsky, and V. B. Shenoy, "Resonant magnetotunneling spectroscopy of strained elliptical Si/SiGe quantum dots", Phys. Rev. B 73, 115319 (2006).
S. Luryi and A. Zaslavsky, "Quantum well silicon-on-insulator devices: tunneling transistor and intersubband laser", Intern. J. High Speed Electronics Syst. 16, 411 (2006).
E. J. Preisler, S. Guha, B. R. Perkins, D. Kazazis, and A. Zaslavsky, "Ultrathin all-epitaxial germanium on insulator devices", Appl. Phys. Lett. 86, 223504 (2005).
D. P. Wang, B. Perkins, A. Yin, A. Zaslavsky, J. Xu, R. Beresford, and G. Snider, "Carbon nanotube gated lateral resonant field-effect transistor", Appl. Phys. Lett. 87, 152102 (2005).
D. P. Wang, F. Y. Biga, A. Zaslavsky, and G. P. Crawford, "Electrical resistance of island-containing thin metal interconnects on polymer substrates under high strain", J. Appl. Phys. 98, 086107 (2005).
C. Aydin, A. Zaslavsky, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, S. Deleonibus, "Lateral interband tunneling transistor in SOI", Appl. Phys. Lett. 84, 1780 (2004).
S. Luryi, J. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: The Nano, the Giga, and the Ultra, Wiley/IEEE Press (2004).
S. Luryi and A. Zaslavsky, "Blue sky for SOI: New opportunities for quantum and hot-electron devices", Solid State Electronics 48, 877 (2004).
A. Zaslavsky, C. Aydin, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, S. Deleonibus, "Ultrathin SOI vertical tunneling transistor", Appl. Phys. Lett. 83, 1653 (2003).
| Year | Degree | Institution |
|---|---|---|
| 1991 | PhD | Princeton University |
| 1988 | MS | Princeton University |
| 1986 | BA | Harvard University |
1988 IBM Graduate Fellowship.
1995 Alfred P. Sloan Fellowship.
1995 Office of Naval Research Young Investigator Award.
1997 National Science Foundation Career Award.
2003 Editorship of Solid State Electronics international journal (Elsevier, U.K.).
2009-12 Visiting Senior Chair of Excellence, Nanosciences Foundation (Grenoble, France).
| Name | Title |
|---|---|
| Bahar, R | Professor Emerita of Engineering, Professor Emerita of Computer Science, Adjunct Professor of Engineering |
| Feldman, Dmitri | Professor of Physics |
| Pacifici, Domenico | Associate Professor of Engineering, Associate Professor of Physics |
| Paine, David | Professor of Engineering, Director of Molecular and Nanoscale Innovation |
| Patterson, William | Senior Research Engineer, Distinguished Senior Lecturer in Engineering |
| ENGN 0510 - Electricity and Magnetism |
| ENGN 1590 - Introduction to Semiconductors and Semiconductor Electronics |
| ENGN 2610 - Physics of Solid State Devices |
| ENGN 2660 - Physics and Technology of Semiconductor Heterostructures |
